报告题目:Fabrciation and optoelectronic properties of low-dimensional boron-based nanostructures
报告人:刘飞 教授(中山大学电子与信息工程学院,光电材料与技术国家重点实验室)
时间:2017年4月14日15:00
地点:明故宫校区A9-506
主办单位:机械结构力学及控制国家重点实验室、国际交流合作处、科协、航空宇航学院
报告内容简介:
Boron-based nanostructures have obtained considerable attention because they have fascinating properties, such as low density, large Young’s modulus, high conductivity and low electron affinity. Although many efforts have been devoted to fabricating the boron-based nanostructures, the controlled synthesis of single crystalline boron-based nanostructures and modulation of their physical properties are still a challenging issue for all the researchers. In our works , we envisaged a boron-thermal reduction way to successfully synthesize the boron-based nanostructures under control. Moreover, we systematically investigated the transportation, field emission and mechanical properties of the boron-based nanostructures. According to our research, the base-up growth mode is found to be more suitable for their nanodevice applications and we fabricated the boron-based nanodevices with nice work performances by modulating their growth mode, nanostructure density and morphology. Finally, we established a simple way to rapidly identify the conduction-type of nanomaterialsbased on the image potential , which may be a promising and powerful tool for promoting the widely-spread applications of nanodevices.