题目:Landscape of TMDs: from synthesis to electrochemical electronics
报告人:Prof. Liu Zheng(Nanyang Technological University, Singapore)
时间:2019年8月6日上午10:00
地点:明故宫校区A9-506
主办单位:机械结构力学及控制国家重点实验室、国际合作处、科协、航空学院
报告内容简介:
Two-dimension (2D) transition-metal dichalcogenides (TMDs) have recently provided a rich source of research opportunity, revealing interesting physical phenomena including quantum-spin Hall effect (QSH), valley polarization, 2D superconductivity, and potential applications for functional devices. Here, we demonstrate that molten salt-assisted chemical vapor deposition can be broadly applied for the synthesis of a wide variety of 2D TMDs [1]. We demonstrate the synthesis of 47 compounds, including 32 binary, 13 alloys, and 2 heterostructured compounds. We elaborate the general growing mechanism of this method, demonstrating that the salt decreases the melting point of reactants and facilitates the formation of intermediate products.
Based on the 2D materials, we have recnelty revisited the semiconductor-electrolyte interface and unraveled a universal self-gating phenomenon through micro-cell based in-situ electronic/electrochemical measurements [2]. We unveiled a surface conductance mechanism under self-gating that dominates the charge transport in semiconductor electrocatalysts, and demonstrate the strong correlation between them. Then we demonstrate that the type of semiconductor catalysts strongly correlates and their electrocatalysis, i.e., n-type semiconductor catalysts favor cathodic reactions such as hydrogen evolution reaction (HER), p-type ones prefer anodic reactions such as oxygen evolution reaction (OER), and bipolar ones tend to perform both anodic and cathodic reactions. Our study provides a new insight into the electronic origin of semiconductor-electrolyte interface during electrocatalysis, paving the way for designing high-performance semiconductor catalysts.
报告人简介:
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